Prakash Palanisamy, PhD

• Experienced Materials Scientist with strong fundamentals and working experience in metals, semiconductors, ceramics, intermetallics, magnetic materials, metallic glasses. • Excellent understanding of structure-processing-property correlation of Advanced Materials. • Proficient in materials characterization. Expert in imaging, chemical and structural characterization using TEM/STEM/EELS, DIB, SEM, XRD, DSC, TGA/DTA, SIMS analysis. • Strong knowledge in metallurgical processes and mechanical testing of materials. • Failure Analysis Expert. Defect investigation using SEM/TEM/Tomography. • Experience in Grain orientation analysis. Grain size-mechanical/electrical property correlation. • Performed channel strain analysis using Nano-beam e-diffraction, Electron-Energy loss spectroscopy, Precession e-diffraction, In-situ electrical biasing in TEM for electro-migration, In-situ heating and cooling to study phase transformation, STEM tomography, HR-TEM of SiGe, GaN, GaAs. • Fabricated small structures and TEM sample preparation using SEM-FIB/DIB. • Lean six-sigma green belt, proficient in design of experiments (DoE), statistical process control and utilization of statistic tools such as JMP. • Strong knowledge and experience with semiconductor device physics and manufacturing process such as thin film deposition using ALD, CVD, PVD and etch cleans, lithography, Metallization and semiconductor device testing. Proficient in Front-End, Back-End of Line process, Novel Interconnect Materials. • Good teamwork and analytical capability; collaborated across multiple teams in Intel corp. Guided and contributed significantly for advanced materials development for components research and pathfinding.