shao beng law

Strength : Able to cope and perform multi-task and deliver projects. Very Systematic Strong in analytical skill Good in designing experiment for troubleshooting issues. Achievement : -Boost SRAM yield in 0.13um by 30-50% by resolving Cu plating pit issue. 2001 -Lead & qualified new liner approach in IBM JDA alliance and transfer the process to Singapore. 2003- 2005 -Fix TDDB issues in 65nm/45nm by optimizing liner process. 2006-2007 -Optimize plating chemistry & qualify new hardware for better defect for 32nm/28nm. 2008-2010 -Optimize CoWP process that pass 32nm reliability. 2009-2010 -Team lead for unit module Plating team in IBM JDA alliance. Demonstrate leadership and technical excellence for 32nm down to 22nm. --- 2008-2010 -Implement & qualify low k 2.55 LDR3 to replace high C V2C film within 3months including reliability data in systematic manner after joining integration (transition from module to integration). – Q4-2010 -Team lead for 22SOI/20LP fatwire. Pass 2x, 4x & 8x reliability qualification on schedule within a year through systematic approach, work as a team & focus – Q1-Q4-2011 -20LP M1 module owner. Troubleshoot & improve isovia yield from 0 to 100% within 5months on new integration scheme -- double patterning via. Achieve milestones 3months ahead of schedule & successfully transfer the process to malta – Jan-2012—Oct-2012 -Driving weekly taskforce, deliver passing EM/SM on 20LP 64pitch within 8months – 2013 to 2014 -Organize & drive daily BEOL 64pitch related working meeting to address technical issues/ M1 layer – 2014 to 2015 -Completed & participated in 1st revision of 5nm PA. 2015-2016 -7nm (40pitch) SADP/ self-align cut scheme & materials selection exploratory. Down select 1 front up and 1 backup flow for further development through various schemes exploratory. 2015-2017 -Introduce & transfer spin on carbon and spin on oxide to headquarter for 7nm BEOL. 2018 -More than 10 patents – 2015 to present