Ting-Hsiang Hung
Device Engineer@ Intel Corporation
Portland, Oregon, United States
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Ting-Hsiang Hung is an experienced device engineer with over 21 years of work experience. He has expertise in characterization, atomic layer deposition, iii nitride, lithography, and afm. Ting-Hsiang Hung has a strong background in advanced FinFET architecture and has managed device performance step-up and technology baseline establishment. He is also skilled in electrical/analytical analysis, device physics, layout design, failure analysis, and logistic management. Ting-Hsiang Hung has worked at Intel Corporation and GlobalFoundries, gaining valuable experience in the semiconductor industry. He is currently based in the United States.
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Research Details
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Emails and Phone Numbers

@osu.edu
@intc.com
@intel.com
@globalfoundries.com
+1 509312****
+1 408969****
+1 049300****
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About

Experienced device engineer in advanced FinFET architecture. Managing device performance step-up and technology baseline establishment. Skills of electrical/analytical analysis, device physics, layout design, failure analysis and logistic management. Also experienced in wide bandgap semiconductor area such as GaN. Project leader of GaN-based MIS-HEMT device research. Experienced in III-nitride device design, process and characterization.

Work Experience

Robert Noyce Building, Santa Clara, California, 95052, US

Semiconductor Manufacturing

123387
Phone
+1 0493001400
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Ting-Hsiang Hung's Professional Milestones

  • Device Engineer (2019-06-01~): Designing and implementing data-driven solutions to streamline software development processes and optimize operational efficiency.
  • Research Associate (2006-09-01~2008-07-01): Collaborated with cross-functional teams to devise novel research projects, contributing to the success of the field.
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Education

The Ohio State University
The Ohio State University

Computer Engineering,

Philosophy,

Doctorates,

Doctor Of Philosophy,

Electrical And Computer Engineering

2010-2015
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