Yu Kuang (Alex) Liao

 3-year 2.5D/3D IC packaging and Silicon Photonics RD experience. 3 US patents (1 pending)  Specialty for 2.5D/3D IC structural design, process integration, and plasma etching for high volume production.  Optical design for silicon photonics devices and antireflection optimization.  Proven ability for research/industrial project management and high communication efficiency.  Having 4-year PhD research focusing on nano-structured opto-electronics and semiconductor materials analysis, in which optical/electrical measurements and system setup, cleanroom processing and numerical simulation are heavily involved. Also having 2-year research for Master degree on colossal magnetic resistant materials, pulsed-laser deposition and vacuum system setup.  Participated ASML Master Class 2014 (Eindhoven, the Netherlands) and was elected as employment candidate. Participated the Forum for Next Generation Researchers and the IV World Materials Summit (Strasbourg, France).  In charge of international joint projects, majorly with the University of Southampton in the UK for three years, which has blossomed into joint symposium (organized by myself), staff exchange, and several quality journal papers including one written by myself, published on Advanced Energy Material in 2015. Another international joint project cooperating with Epitaxy group of imec in Belgium will also have a quality paper to be submitted soon.  Having 20 journal and conference papers in my 4-year PhD career, including Advanced Energy Materials, ACS Nano, Nano Letters, Solar Energy Materials & Solar Cells, Optics Express…etc., and one written by myself to be submitted to Advanced Energy Materials, two more to be submitted to ACS family journals, and one working with imec to be submitted soon.  Currently working at Industrial Technology Research Institute of Taiwan as a Researcher, focusing on scale-up and yield rate issues of Cu(In,Ga)Se2 solar cells, and development of new technology using quantum dots and ultra-fast laser processing.